Investigation of Defect Distributions in SiO2/AlGaN/GaN High-Electron-Mobility Transistors by Using Capacitance-Voltage Measurement with Resonant Optical Excitation

被引：3

作者：

Kim, Tae-Soo ^{[1
]}

Lim, Seung-Young ^{[1
]}

Park, Yong-Keun ^{[1
]}

Jung, Gunwoo ^{[1
]}

Song, Jung-Hoon ^{[1
]}

Cha, Ho-Young ^{[2
]}

Han, Sang-Woo ^{[2
]}

机构：

[1] Kongju Natl Univ, Dept Phys, Gongju 32588, South Korea

[2] Hongik Univ, Sch Elect & Elect Engn, Seoul 04066, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2018年 / 72卷 / 11期

基金：

新加坡国家研究基金会;

关键词：

MOS HEMT; Capacitance-voltage; Interfacial trap; Resonance excitation; THRESHOLD-VOLTAGE; SURFACE PASSIVATION; ALGAN/GAN; HEMTS; HETEROSTRUCTURES; SI3N4; GATE; SIO2; GAN;

D O I：

10.3938/jkps.72.1332

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We investigated the distributions and the energy levels of defects in SiO2/AlGaN/GaN highelectron-mobility transistors (HEMTs) by using frequency-dependent (F-D) capacitance-voltage (C-V) measurements with resonant optical excitation. A Schottky barrier (SB) and a metal-oxidesemiconductor (MOS) HEMT were prepared to compare the effects of defects in their respective layers. We also investigated the effects of those layers on the threshold voltage (V (th) ). A drastic voltage shift in the C-V curve at higher frequencies was caused by the large number of defect levels in the SiO2/GaN interface. A significant shift in V (th) with additional light illumination was observed due to a charging of the defect states in the SiO2/GaN interface. The voltage shifts were attributed to the detrapping of defect states at the SiO2/GaN interface.

引用

页码：1332 / 1336

页数：5

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