Modelling lateral electron transport in tunnel-coupled quantum wells

被引：0
|
作者：
Aleshkin, VY [1 ]
Dubinov, AA [1 ]
机构：
[1] RAS, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 04期
关键词：
D O I：
10.1088/0268-1242/19/4/010
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The scheme of a laser which can operate in the far-infrared range (lambda similar to 150 mum) is suggested. In order to attain the inversion of the subband population, it is suggested that electron transport in three tunnel-coupled quantum wells in a strong electric field, which lies in the plane of quantum wells, be used. An important specific feature of the structure suggested is the presence of a single rough heterointerface. The electron transport was simulated by the Monte Carlo method for the AlxGa1-xAs/GaAs (x = 0.2-0.3) heterostructure. The simulation demonstrated that the population inversion in the first and second subbands is realized for fields above 1.2 kV cm(-1) at T = 4.2 and 77 K.
引用
收藏
页码：S27 / S28
页数：2
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