Interstitial H2 in Si:: Solution of the puzzle

被引:0
作者
Stavola, M
Chen, EE
Fowler, WB
Zhou, JA
Walters, P
机构
[1] Lehigh Univ, Dept Phys, Bethlehem, PA 18015 USA
[2] Lehigh Univ, Sherman Fairchild Lab, Bethlehem, PA 18015 USA
来源
PHYSICS OF SEMICONDUCTORS 2002, PROCEEDINGS | 2003年 / 171卷
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中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Interstitial H-2 in Si has given rise to a number of perplexing puzzles since the discovery of its vibrational spectrum. The absence of an ortho-para splitting for the H-2 line and an apparent low-symmetry found in stress experiments misled several researchers, including the present authors, into thinking that interstitial H-2 must have a barrier that prevents rotation. Our discovery of a new vibrational line for interstitial HD in Si and its interpretation establish that interstitial H-2 in Si is a nearly free rotator. The insights provided by these results lead to simple, in retrospect, explanations of the microscopic properties of interstitial H-2 and an O-H-2 complex in Si.
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页码:85 / 92
页数:8
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