Effects of the annealing duration of the ZnO buffer layer on structural and optical properties of ZnO rods grown by a hydrothermal process

被引：32

作者：

Shin, C. M. ^{[1
]}

Lee, J. Y. ^{[1
]}

Heo, J. H. ^{[1
]}

Park, J. H. ^{[1
]}

Kim, C. R. ^{[1
]}

Ryu, H. ^{[1
]}

Chang, J. H. ^{[2
]}

Son, C. S. ^{[3
]}

Lee, W. J. ^{[4
]}

Tan, S. T. ^{[5
]}

Zhao, J. L. ^{[6
]}

Sun, X. W. ^{[5
,6
]}

机构：

[1] Inje Univ, Ctr Nano Mfg, Dept Nano Syst Engn, Gimhae 621749, Gyeongnam, South Korea

[2] Korea Maritime Univ, Pusan 606791, South Korea

[3] Silla Univ, Dept Elect Mat Engn, Pusan 617736, South Korea

[4] Dong Eui Univ, Dept Nano Engn, Pusan 614714, South Korea

[5] Inst Microelect, Singapore 117685, Singapore

[6] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

APPLIED SURFACE SCIENCE | 2009年 / 255卷 / 20期

关键词：

Buffer layer annealing duration; ZnO; Hydrothermal process; NANOROD ARRAYS; LOW-TEMPERATURE; POLYVINYL-ALCOHOL; FILMS; SUBSTRATE; DEPENDENCE; MORPHOLOGY; SI;

D O I：

10.1016/j.apsusc.2009.06.004

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this study, the effects of the annealing duration of a zinc oxide (ZnO) buffer layer on structural and optical properties of ZnO rods grown by a hydrothermal process are discussed. A ZnO buffer layer was deposited on p-type Si (1 1 1) substrates by the metal organic chemical vapor deposition (MOCVD) method. After that, ZnO rods were grown on the ZnO-buffer/Si (1 1 1) substrate by a hydrothermal process. In order to determine the optimum annealing duration of the buffer layer for the growth of ZnO rods, durations ranging from 0.5 to 30 min were tried. The morphology and crystal structure of the ZnO/ZnO-buffer/Si (1 1 1) were measured by field emission scanning electron microscopy (FE-SEM) and x-ray diffraction (XRD). The optical properties were investigated by photoluminescence (PL) measurement. (C) 2009 Elsevier B. V. All rights reserved.

引用

页码：8501 / 8505

页数：5

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