Electrical Stability and Flicker Noise of Thin-Film Heterojunction FETs on Poly-Si Substrates

被引：6

作者：

Hekmatshoar, Bahman ^{[1
]}

机构：

[1] IBM Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

IEEE ACCESS | 2019年 / 7卷

关键词：

1/f noise; heterojunctions; silicon devices; stability; thin film transistors; FIELD-EFFECT TRANSISTORS; BIAS TEMPERATURE INSTABILITY; LOW-FREQUENCY NOISE; 1/F NOISE; ELECTRONICS; TECHNOLOGY; MODEL; TRANSPARENT; RELIABILITY; PENTACENE;

D O I：

10.1109/ACCESS.2019.2921233

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Electrical stability and flicker (1/f) noise of thin-film heterojunction field-effect transistors (HJEETs) comprised of hydrogenated amorphous Si (a-Si:H) gate and hydrogenated crystalline Si (c-Si:H) source and drain regions on small-grain poly-Si substrates are investigated and benchmarked against conventional thin-film transistors (TFTs). Despite the low growth temperature of a-Si:H and c-Si:H (similar to 200 degrees C), HJEETs are found to have higher stability and lower flicker noise than conventional TFTs. These results may be attributed partly to the device structure and partly to the high-quality gate heterojunction of the HJEETs.

引用

页码：77063 / 77069

页数：7

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