The electrical properties and the interfaces of CU2O/ZnO/ITO p-i-n heterojunction

被引：88
作者：
Zhang, DK
Liu, YC [1 ]
Liu, YL
Yang, H
机构：
[1] NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
[2] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Key Lab Excited State Proc, Changchun 130022, Peoples R China
来源：
PHYSICA B-CONDENSED MATTER | 2004年 / 351卷 / 1-2期
基金：
中国国家自然科学基金;
关键词：
Zno; Cu2O; heterojunction; interface;
D O I：
10.1016/j.physb.2004.06.003
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A Cu2O/ZnO/ITO p-i-n heterojunction was fabricated by electrochemical deposition method. The electrical properties of the p-Cu2O/i-ZnO/n-ITO heterojunction were studied using the current-voltage measurements. A distinct junction characteristic was observed. Here, the forward and reverse turn-on voltages were about 0.53 and -0.60 V, respectively. An energy-band diagram was proposed to analyze the electrical properties. In terms of the results of the current-voltage measurements, it was deduced that the turn-on voltage was smaller than the barrier potential, which was ascribed to the existence of the interface defect states. The mechanism of charge transportation was discussed and a tunnel recombination process was proposed to explain its electrical properties. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：178 / 183
页数：6
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