First-principles study of O2 adsorption on Al-doped ZnO(10(1)over-bar0) surface

被引:31
作者
Ma, Dongwei [1 ]
Wang, Zhi [1 ]
Cui, Haitao [1 ]
Zeng, Jun [1 ]
He, Chaozheng [2 ]
Lu, Zhansheng [3 ]
机构
[1] Anyang Normal Univ, Sch Phys, Anyang 455000, Peoples R China
[2] Nanyang Normal Univ, Coll Phys & Elect Engn, Nanyang 473061, Peoples R China
[3] Henan Normal Univ, Coll Phys & Elect Engn, Xinxiang 453007, Peoples R China
基金
中国国家自然科学基金;
关键词
Sensing mechanism; Al-doped ZnO; O-2; adsorption; First-principles calculation; ZNO THIN-FILMS; GAS SENSOR; SENSING CHARACTERISTICS; CO OXIDATION; ZINC-OXIDE; AB-INITIO; OXYGEN; ENERGY; FABRICATION; ACTIVATION;
D O I
10.1016/j.snb.2015.10.029
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Understanding the O-2 adsorption on the Al-doped ZnO surface is crucial to unravel its enhanced sensing performances toward reducing gases (such as CO and H-2) compared with its undoped counterpart. We have studied the O-2 adsorption on the defect-free Al-doped ZnO(10 (1) over bar0) surface by using first-principles calculations. It is found that Al doping introduces electrons into the conduction band of the ZnO(10 (1) over bar0) surface, which should significantly enhance the conductance of the oxide. The adsorbed O-2 can effectively acquire electrons from the Al-doped ZnO(10 (1) over bar0) surface, leading to the decrease in the conductance of the materials. Upon gaining electrons, the adsorbed O-2 molecules on the Al-doped ZnO(10 (1) over bar0) surfaces exist in the form of superoxo O-2(-) species, which are expected to be chemically active toward reducing gases. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:372 / 380
页数:9
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