Photoluminescence characteristics of Pb-doped, molecular-beam-epitaxy grown ZnSe crystal layers

被引：3

作者：

Mita, Y ^{[1
]}

Kuronuma, R ^{[1
]}

Inoue, M ^{[1
]}

Sasaki, S ^{[1
]}

Miyamoto, Y ^{[1
]}

机构：

[1] Tokyo Univ Technol, Hachioji, Tokyo 1920892, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 96卷 / 04期

关键词：

D O I：

10.1063/1.1769101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The characteristic green photoluminescence emission and related phenomena in Pb-doped, molecular-beam-epitaxy (MBE)-grown ZnSe crystal layers were investigated to explore the nature of the center responsible for the green emission. The intensity of the green emission showed a distinct nonlinear dependence on excitation intensity. Pb-diffused polycrystalline ZnSe was similarly examined for comparison. The characteristic green emission has been observed only in MBE-grown ZnSe crystal layers with moderate Pb doping. The results of the investigations on the growth conditions, luminescence, and related properties of the ZnSe crystal layers suggest that the green emission is due to isolated Pb replacing Zn and surrounded with regular ZnSe lattice with a high perfection. (C) 2004 American Institute of Physics.

引用

页码：1904 / 1908

页数：5

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