Creating oxide dot arrays on III-V semiconductors by AFM lithography

被引：0

作者：

Stadelmann, TO ^{[1
]}

Nicholas, RJ ^{[1
]}

机构：

[1] Univ Oxford, Clarendon Lab, Oxford OX1 3PU, England

来源：

MICROSCOPY OF SEMICONDUCTING MATERIALS 2003 | 2003年 / 180期

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We perform local anodic oxidation (LAO) on III-V semiconductor surfaces with the help of an atomic force microscope (AFM). Regular arrays of oxide dots are created by applying a voltage in the range 10-20 V to a conducting tip. We succeed in drawing dots with diameters of 30nm or less and heights of 4-6nm, allowing for lattice periods as small as 75nm. With an anodisation time of 100-250ms per dot, the creation of large patterns is possible provided the drift of the instrument is corrected for.

引用

页码：661 / 664

页数：4

共 6 条

[1] MODIFICATION OF HYDROGEN-PASSIVATED SILICON BY A SCANNING TUNNELING MICROSCOPE OPERATING IN AIR [J].