Long wavelength emitting InAs/Ga0.85In0.15NxAs1-x quantum dots on GaAs substrate

被引：25

作者：

Richter, M.

Damilano, B.

Duboz, J. -Y.

Massies, J.

Wieck, A. D.

机构：

[1] CNRS, Ctr Rech HeteroEpitaxie & Applicat, F-06560 Valbonne, France

[2] Ruhr Univ Bochum, Lehrstuhl Angew Festkorperphys, D-44780 Bochum, Germany

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 23期

关键词：

D O I：

10.1063/1.2209879

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InAs quantum dots (QDs) overgrown by a Ga(0.85)In(0.15)NxAs(1-x) (0 <= x <= 0.017) layer have been realized on GaAs substrate by molecular beam epitaxy. When the nitrogen composition increases, the photoluminescence (PL) wavelength redshifts up to 1.52 mu m. It is shown that PL properties of InAs/Ga0.85In0.15N0.012As0.988 QDs are improved by thermal annealing. Finally, 1.45 mu m PL emission with a 38.5 meV full width at half maximum is obtained at room temperature. (c) 2006 American Institute of Physics.

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页数：3

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