Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing

被引：17

作者：

Reckinger, Nicolas ^{[1
]}

Tang, Xiaohui ^{[1
]}

Bayot, Vincent ^{[1
]}

Yarekha, Dmitri A. ^{[2
]}

Dubois, Emmanuel ^{[2
]}

Godey, Sylvie ^{[2
]}

Wallart, Xavier ^{[2
]}

Larrieu, Guilhem ^{[2
]}

Laszcz, Adam ^{[3
]}

Ratajczak, Jacek ^{[3
]}

Jacques, Pascal J. ^{[4
]}

Raskin, Jean-Pierre ^{[5
]}

机构：

[1] Univ Catholique Louvain, Microelect Lab, B-1348 Louvain, Belgium

[2] IEMN ISEN, CNRS, UMR 8520, F-59652 Villeneuve Dascq, France

[3] Inst Electr Mat Technol, PL-02668 Warsaw, Poland

[4] Univ Catholique Louvain, Lab Ingn Mat & Procedes, B-1348 Louvain, Belgium

[5] Univ Catholique Louvain, Microwave Lab, B-1348 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 19期

关键词：

annealing; elemental semiconductors; erbium compounds; Schottky barriers; silicon; transmission electron microscopy; X-ray diffraction; X-ray photoelectron spectra; RARE-EARTH-METALS; THIN-FILMS; ROOM-TEMPERATURE; SI(100); AMORPHIZATION; SOURCE/DRAIN; GROWTH; DIODES;

D O I：

10.1063/1.3136849

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of the annealing temperature. The SBH is found to drop substantially from 0.43 eV for the as-deposited sample to reach 0.28 eV, its lowest value, at 450 degrees C. By x-ray diffraction, high resolution transmission electron microscopy, and x-ray photoelectron spectroscopy, the decrease in the SBH is shown to be associated with the progressive formation of crystalline ErSi(2-x).

引用

页数：3

共 50 条

[11] SILICIDE FORMATION IN NI-SI SCHOTTKY-BARRIER DIODES
COE, DJ
RHODERICK, EH
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (06) : 965 - 972
[12] Effects of Rapid Thermal Annealing on the Structural, Optical, and Electrical Properties of Au/CuPc/n-Si (MPS)-type Schottky Barrier Diodes
P. R. Sekhar Reddy
V. Janardhanam
V. Rajagopal Reddy
Min Hyuk Park
Chel-Jong Choi
Applied Physics A, 2021, 127
[13] PdYb-Silicide with Low Schottky Barrier Height to n-Si Formed from Pd/Yb/Si(100) Stacked Structures
Ohmi, Shun-ichiro
Chen, Mengyi
Zuo, Weiguang
Masahiro, Yasushi
IEICE TRANSACTIONS ON ELECTRONICS, 2017, E100C (05): : 458 - 462
[14] Effects of Rapid Thermal Annealing on the Structural, Optical, and Electrical Properties of Au/CuPc/n-Si (MPS)-type Schottky Barrier Diodes
Sekhar Reddy, P. R.
Janardhanam, V.
Rajagopal Reddy, V.
Park, Min Hyuk
Choi, Chel-Jong
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2021, 127 (10):
[15] The barrier height enhancement of the Au/n-Si/Al Schottky barrier diode by electrochemically formed an organic Anthracene layer on n-Si
Caldiran, Z.
Deniz, A. R.
Aydogan, S.
Yesildag, A.
Ekinci, D.
SUPERLATTICES AND MICROSTRUCTURES, 2013, 56 : 45 - 54
[16] Thermal annealing effects on graphene/n-Si Schottky junction solar cell: removal of PMMA residues
Ono, Yuzuki
Im, Hojun
JAPANESE JOURNAL OF APPLIED PHYSICS, 2023, 62 (04)
[17] EFFECT OF ANNEALING ON THE SCHOTTKY-BARRIER HEIGHT OF AL/N-SI SCHOTTKY DIODES AFTER AR+ ION-BOMBARDMENT
CARR, BA
FRIEDLAND, E
MALHERBE, JB
JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) : 4775 - 4777
[18] FEATURES OF CHARGE TRANSPORT IN Mo/n-Si STRUCTURES WITH A SCHOTTKY BARRIER
Olikh, O. Ya.
UKRAINIAN JOURNAL OF PHYSICS, 2013, 58 (02): : 126 - 134
[19] EFFECT OF CONVENTIONAL AND RAPID THERMAL ANNEALING ON PLATINUM SILICIDE SCHOTTKY-BARRIER DIODES
DIMITRIADIS, CA
APPLIED PHYSICS LETTERS, 1990, 56 (02) : 143 - 145
[20] The influence of silicide formation on the barrier height of Ti/Si MIS Schottky barriers
De Bosscher, W
Van Meirhaeghe, RL
Hanselaer, PL
Caenepeel, L
Laflere, WH
Cardon, F
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1986, 1 (06) : 376 - 382

← 1 2 3 4 5 →