Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing

被引：17

作者：

Reckinger, Nicolas ^{[1
]}

Tang, Xiaohui ^{[1
]}

Bayot, Vincent ^{[1
]}

Yarekha, Dmitri A. ^{[2
]}

Dubois, Emmanuel ^{[2
]}

Godey, Sylvie ^{[2
]}

Wallart, Xavier ^{[2
]}

Larrieu, Guilhem ^{[2
]}

Laszcz, Adam ^{[3
]}

Ratajczak, Jacek ^{[3
]}

Jacques, Pascal J. ^{[4
]}

Raskin, Jean-Pierre ^{[5
]}

机构：

[1] Univ Catholique Louvain, Microelect Lab, B-1348 Louvain, Belgium

[2] IEMN ISEN, CNRS, UMR 8520, F-59652 Villeneuve Dascq, France

[3] Inst Electr Mat Technol, PL-02668 Warsaw, Poland

[4] Univ Catholique Louvain, Lab Ingn Mat & Procedes, B-1348 Louvain, Belgium

[5] Univ Catholique Louvain, Microwave Lab, B-1348 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 19期

关键词：

annealing; elemental semiconductors; erbium compounds; Schottky barriers; silicon; transmission electron microscopy; X-ray diffraction; X-ray photoelectron spectra; RARE-EARTH-METALS; THIN-FILMS; ROOM-TEMPERATURE; SI(100); AMORPHIZATION; SOURCE/DRAIN; GROWTH; DIODES;

D O I：

10.1063/1.3136849

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of the annealing temperature. The SBH is found to drop substantially from 0.43 eV for the as-deposited sample to reach 0.28 eV, its lowest value, at 450 degrees C. By x-ray diffraction, high resolution transmission electron microscopy, and x-ray photoelectron spectroscopy, the decrease in the SBH is shown to be associated with the progressive formation of crystalline ErSi(2-x).

引用

页数：3

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