0.4 mW wideband LNA with double gm enhancement and feed-forward noise cancellation

被引:21
作者
Li, Zhi [1 ]
Sun, Liguo [1 ]
Huang, Lu [2 ]
机构
[1] Univ Sci & Technol China, Dept Elect Engn & Informat Sci, Hefei 230026, Peoples R China
[2] Univ Sci & Technol China, Dept Elect Sci & Technol, Hefei 230026, Peoples R China
关键词
NM CMOS; INDUCTORLESS;
D O I
10.1049/el.2013.3537
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A low-power wideband common-gate (CG) low-noise amplifier (LNA) presented. The CG LNA uses double g(m) enhancement to provide input matching under low-power consumption. Feed-forward noise cancellation (FFNC) is employed in the LNA to suppress the noise from the CG transistor. The LNA is designed and fabricated in TSMC 130-nm CMOS technology. This LNA can achieve a maximum gain of 14 dB with a 3 dB bandwidth from 350 to 950 MHz. The LNA consumes 0.5 mA current under a 0.8-V supply. The average noise figure of the LNA is 4.0 dB. The core area of the LNA is 0.06 mm(2).
引用
收藏
页码:400 / 401
页数:2
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