Selective crystallization of amorphous silicon thin film by a CW green laser

被引：15
|
作者：
Park, Seong Jin [1 ]
Ku, Yu Mi
Kim, Eun Hyun
Jang, Jin
Kim, Ki Hyung
Kim, Chae Ok
机构：
[1] Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South Korea
[2] Hanyang Univ, Dept Phys, Seoul 133791, South Korea
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 2006年 / 352卷 / 9-20期
关键词：
crystallization; thin film transistors;
D O I：
10.1016/j.jnoncrysol.2005.10.070
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A simple and effective method for selective CW laser crystallization of a-Si (CLC) without pre-patterning of a-Si has been reported. By using a metallic shadow mask instead of a photolithographic process, we can reduce the process steps and time compared with a conventional CLC process. It shows very high performance-mobility of 173 cm(2)/s, I-off of similar to 10(-13) A @ V-d = -5 V, I-on/I-off of > 10(8) - as a p-channel poly-Si TFT even without any pre-/post-treatment to improve TFT characteristics such as plasma hydrogenation. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：993 / 997
页数：5
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