Perovskite Quantum Dot Lasing in a Gap-Plasmon Nanocavity with Ultralow Threshold

被引:78
作者
Hsieh, Yu-Hung [1 ,2 ]
Hsu, Bo-Wei [2 ]
Peng, Kang-Ning [1 ]
Lee, Kuan-Wei [1 ]
Chu, Chih Wei [1 ,2 ]
Chang, Shu-Wei [1 ]
Lin, Hao-Wu [2 ]
Yen, Ta-Jen [2 ]
Lu, Yu-Jung [1 ]
机构
[1] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan
[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan
关键词
CW lasing; lead halide perovskites; plasmonics; spaper; nanolaser; quantum dots; gap plasmon; ROOM-TEMPERATURE; EMISSION; ENHANCEMENT; CSPBX3; LASERS; BR; CL;
D O I
10.1021/acsnano.0c04224
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Lead halide perovskite materials have recently received considerable attention for achieving an economic and tunable laser owing to their solution-processable feature and promising optical properties. However, most reported perovskite-based lasers operate with a large lasing-mode volume, resulting in a high lasing threshold due to the inefficient coupling between the optical gain medium and cavity. Here, we demonstrate a continuous-wave nanolasing from a single lead halide perovskite (CsPbBr3) quantum dot (PQD) in a plasmonic gap-mode nanocavity with an ultralow threshold of 1.9 Wcm(-2) under 120 K. The calculated ultrasmall mode volume (similar to 0.002 lambda(3)) with a z-polarized dipole and the significantly large Purcell enhancement at the corner of the nanocavity inside the gap dramatically enhance the light-matter interaction in the nanocavity, thus facilitating lasing. The demonstration of PQD nanolasing with an ultralow-threshold provides an approach for realizing on-chip electrically driven lasing and integration into on-chip plasmonic circuitry for ultrafast optical communication and quantum information processing.
引用
收藏
页码:11670 / 11676
页数:7
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