Quantum-Hall to Insulator Transition in Ultra-Low-Carrier-Density Topological Insulator Films and a Hidden Phase of the Zeroth Landau Level

被引:19
|
作者
Salehi, Maryam [1 ]
Shapourian, Hassan [2 ,3 ]
Rosen, Ilan Thomas [4 ,5 ]
Han, Myung-Geun [6 ]
Moon, Jisoo [7 ]
Shibayev, Pavel [7 ]
Jain, Deepti [7 ]
Goldhaber-Gordon, David [5 ,8 ]
Oh, Seongshik [7 ]
机构
[1] Rutgers State Univ, Dept Mat Sci & Engn, Piscataway, NJ 08854 USA
[2] Univ Chicago, James Franck Inst, Chicago, IL 60637 USA
[3] Univ Chicago, Kadanoff Ctr Theoret Phys, Chicago, IL 60637 USA
[4] Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA
[5] SLAC Natl Accelerator Lab, Stanford Inst Mat & Energy Sci, Menlo Pk, CA 94025 USA
[6] Brookhaven Natl Lab, Condensed Matter Phys & Mat Sci, Upton, NY 11973 USA
[7] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA
[8] Stanford Univ, Dept Phys, Stanford, CA 94305 USA
基金
美国国家科学基金会;
关键词
quantum Hall effect; quantum Hall to insulator transition; scaling analysis; topological insulator thin-films; zeroth Landau level; SURFACE-STATE; LIQUID;
D O I
10.1002/adma.201901091
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A key feature of the topological surface state under a magnetic field is the presence of the zeroth Landau level at the zero energy. Nonetheless, it is challenging to probe the zeroth Landau level due to large electron-hole puddles smearing its energy landscape. Here, by developing ultra-low-carrier density topological insulator Sb2Te3 films, an extreme quantum limit of the topological surface state is reached and a hidden phase at the zeroth Landau level is uncovered. First, an unexpected quantum-Hall-to-insulator-transition near the zeroth Landau level is discovered. Then, through a detailed scaling analysis, it is found that this quantum-Hall-to-insulator-transition belongs to a new universality class, implying that the insulating phase discovered here has a fundamentally different origin from those in nontopological systems.
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页数:7
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