Thermal Conductivity of the Materials Based on Silicon Carbide and Silicon Nitride

被引：6
|
作者：
Perevislov, S. N. [1 ]
Markov, M. A. [2 ]
Kuznetsov, Yu. A. [3 ]
Kravchenko, I. N. [4 ,5 ]
Krasikov, A. V. [2 ]
机构：
[1] Russian Acad Sci, Grebenshchikov Inst Silicate Chem, St Petersburg 119034, Russia
[2] Natl Res Ctr Kurchatov Inst, Gorynin Cent Res Inst Struct Mat Prometey, St Petersburg 191015, Russia
[3] Parakhin Orel State Agr Univ, Oryol 302019, Russia
[4] Russian State Agr Univ, Moscow Timiryazev Agr Acad, Moscow 127550, Russia
[5] Russian Acad Sci, Blagonravov Inst Engn Sci, Moscow 101990, Russia
来源：
RUSSIAN METALLURGY | 2020年 / 2020卷 / 13期
关键词：
thermal conductivity; silicon carbide; silicon nitride; reaction sintering; liquid-phase sintering; MECHANICAL-PROPERTIES;
D O I：
10.1134/S0036029520130297
中图分类号：
TF [冶金工业];
学科分类号：
0806 ;
摘要：
The temperature dependences of the thermal conductivity of silicon carbide- and silicon nitride-based materials prepared by various methods are presented. The thermal conductivity of silicon carbide-based materials prepared by reaction (SiSiC) and liquid-phase (LPSSiC) sintering and silicon nitride-based materials prepared by liquid phase sintering (SSN) is studied. The dependences of the thermal conductivity on the density, porosity, and content of oxide addition (for the LPSSiC and SSN materials) are presented.
引用
收藏
页码：1477 / 1484
页数：8
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