Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(100) interfacial transition layer

被引：25

作者：

Nohira, H ^{[1
]}

Shiraishi, T

Takahashi, K

Hattori, T

Kashiwagi, I

Ohshima, C

Ohmi, S

Iwai, H

Joumori, S

Nakajima, K

Suzuki, M

Kimura, K

机构：

[1] Musashi Inst Technol, Setagaya Ku, Tokyo 1588557, Japan

[2] Tokyo Inst Technol, Midori Ku, Yokohama, Kanagawa 2268502, Japan

[3] Kyoto Univ, Sakyo Ku, Kyoto 6068501, Japan

来源：

APPLIED SURFACE SCIENCE | 2004年 / 234卷 / 1-4期

关键词：

Rutherford back scattering; angle-resolved photoelectron spectroscopy; high-k dielectrics; depth profiling; electronic band structure; La2O3;

D O I：

10.1016/j.apsusc.2004.05.032

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The composition and chemical structures of lanthanum oxide films were determined by combining angle-resolved photoelectron spectroscopy and high resolution Rutherford backscattering studies. Conduction and valence band discontinuity at La2O3/Si(1 0 0) interface was also determined by measuring the O 1s photoelectron energy loss and valence band spectra. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：493 / 496

页数：4

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