Preparation of CuGaSe2 solar cells and their optimization

被引：0

作者：

Nishiwaki, S ^{[1
]}

Dziedzina, M ^{[1
]}

Schuler, S ^{[1
]}

Siebentritt, S ^{[1
]}

Bär, M ^{[1
]}

Rumberg, A ^{[1
]}

Rusu, M ^{[1
]}

Klenk, R ^{[1
]}

Lux-Steiner, MC ^{[1
]}

机构：

[1] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany

来源：

PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C | 2003年

关键词：

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

CuGaSe2 (CGS) solar cells with n-ZnO/i-ZnO/CdS /CGS/Mo/soda-lime glass structure were prepared and the window layers were optimized. An increase in the effective collection length as well as in the open circuit voltage with the increase in the CdS layer thickness was observed. This was correlated to an increase in the activation energy of the dominant recombination process. With an i-ZnO layer prepared by ion layer gas reaction, a higher spectral response was seen in the short wavelength region below 500 nm, compared to that with a sputtered one. So far, with optimized thickness of the CdS layer and by using the ILGAR i-ZnO layer, an efficiency of 8.2% was obtained (AM 1.5 active area).

引用

页码：471 / 474

页数：4

共 14 条

[1]

[Anonymous], 1994, P 12 EUR PVSE

[2] ILGAR-ZnO Window Extension Layer:: An adequate substitution of the conventional CBD-CdS buffer in Cu(In,Ga) (S,Se)2-based solar cells with superior device performance [J].

Bär, M ;

Muffler, HJ ;

Fischer, CH ;

Zweigart, S ;

Karg, F ;

Lux-Steiner, MC .

PROGRESS IN PHOTOVOLTAICS, 2002, 10 (03) :173-184

[3] ILGAR technology IV:: ILGAR thin film technology extended to metal oxides [J].

Bär, M ;

Muffler, HJ ;

Fischer, CH ;

Lux-Steiner, MC .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 67 (1-4) :113-120

[4]

Contreras MA, 1999, PROG PHOTOVOLTAICS, V7, P311, DOI 10.1002/(SICI)1099-159X(199907/08)7:4<311::AID-PIP274>3.0.CO

[5]

2-G

[6] Electronic properties of CuGaSe2-based heterojunction solar cells.: Part I.: Transport analysis [J].

Nadenau, V ;

Rau, U ;

Jasenek, A ;

Schock, HW .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) :584-593

[7]

NADENAU V, 1997, P 14 EUR PHOT SOL EN, P1250

[8]

NISHIWAKI S, 2001, 17 EUR PVSEC MUN GER, P1147

[9]

NISHIWAKI S, IN PRESS PROG PHOTOV

[10] Electronic loss mechanisms in chalcopyrite based heterojunction solar cells [J].

Rau, U ;

Jasenek, A ;

Schock, HW ;

Engelhardt, F ;

Meyer, T .

THIN SOLID FILMS, 2000, 361 :298-302

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