Noncollinearity-modulated Electronic Properties of Monolayer CrI3

Introducing noncollinear magnetization into a monolayer CrI3 is proposed to be an effective approach to modulate the local electronic properties of the two-dimensional (2D) magnetic material. Using first-principles calculation, we illustrate that both the conduction and valence bands in the monolayer CrI3 are lowered down by spin spiral states. The distinct electronic structure of the monolayer noncollinear CrI3 can be applied in nanoscale functional devices. As a proof of concept, we show that a magnetic domain wall can form a one-dimensional conducting channel in the 2D semiconductor via proper gating. This conducting channel is approximately 7 nm wide and has a carrier concentration of 10(13)-10(14) cm(-2).