Formation of a two-dimensional electron gas in an inverted undoped heterostructure with a shallow channel depth

被引：17

作者：

Kawaharazuka, A

Saku, T

Hirayama, Y

Horikoshi, Y

机构：

[1] Nippon Telegraph & Tel Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

[2] Waseda Univ, Sch Sci & Engn, Shinjuku Ku, Tokyo 1690072, Japan

[3] CREST, Kawaguchi, Saitama 3320012, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 02期

关键词：

D O I：

10.1063/1.371965

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the dependence of transport characteristics of a two-dimensional electron gas (2DEG) on channel depth in an inverted undoped GaAs/AlGaAs heterostructure. We succeeded in forming a high-mobility 2DEG in a sample with 70 nm channel depth. We controlled the carrier density by varying the back-gate bias over a wide range. The highest mobility reached 2.3x10(6) cm(2)/Vs at 3.4x10(11) cm(-2). The relation between mobility and carrier density is determined: the mobility decreases in a low-carrier-density region as the channel depth decreases. This result suggests that the scattering due to the remote surface charges plays a more significant role. (C) 2000 American Institute of Physics. [S0021-8979(00)02002-8].

引用

收藏

页码：952 / 954

页数：3

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