Growth and characterization of GaGdN and AlGdN on SiC by RF-MBE

被引：10

作者：

Teraguchi, N

Suzuki, A

Nanishi, Y

机构：

[1] Sharp Co Ltd, Adv Technol Res Labs, Tenri, Nara 6328567, Japan

[2] Ritsumeikan Univ, Dept Photon, Shiga 5258577, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷

关键词：

AlGaN; GaGdN; RF-MBE; SiC;

D O I：

10.4028/www.scientific.net/MSF.389-393.1477

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have successfully grown GaGdN and AlGdN alloy semiconductors by RF plasma-assisted molecular beam epitaxy (RF-MBE) for the first time. Those are epitaxially grown on (0001) 6H-SiC substrates. The strained lattice constants for the a-axis and the c-axis of wurtzite structure of GdN are estimated to be 0.348nm and 0.549nm, respectively. The band-edge emission wavelength of Ga0.94Gd0.06N measured by room temperature cathodoluminescence (CL) is 370nm, which is slightly longer than that of GaN (363nm). A Gd3(+) related emission is also observed at 645nm in the CL spectra. In the CL spectra of AlGdN, a strong and sharp emission located at 317nm is observed.

引用

页码：1477 / 1480

页数：4

共 6 条

[1] GALASSO FS, 1970, STRUCTURE PROPERTIES, pCH1
[2] KLENN W, 1956, Z ANORG ALLG CHEM, V288, P87
[3] Maruyama T, 2000, IPAP CONFERENCE SER, V1, P482
[4] SUPERBRIGHT GREEN INGAN SINGLE-QUANTUM-WELL-STRUCTURE LIGHT-EMITTING-DIODES
NAKAMURA, S
SENOH, M
IWASA, N
NAGAHAMA, S
YAMADA, T
MUKAI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (10B): : L1332 - L1335
[5] GAN, AIN, AND INN - A REVIEW
STRITE, S
MORKOC, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04): : 1237 - 1266
[6] Growth of AlN films on SiC substrates by RF-MBE and RF-MEE
Teraguchi, N
Suzuki, A
Saito, Y
Yamaguchi, T
Araki, T
Nanishi, Y
[J]. JOURNAL OF CRYSTAL GROWTH, 2001, 230 (3-4) : 392 - 397

← 1 →