Thickness dependence of the martensitic transformation in textured Cu-Al-Ni thin films grown by sputtering on Si (001)

被引：0
作者：
Moran, M. [1 ]
Condo, A. M. [1 ,2 ,3 ]
Soldera, F. [4 ]
Sirena, M. [1 ,2 ,3 ]
Haberkorn, N. [1 ,2 ,3 ]
机构：
[1] Inst Balseiro, Av Bustillo 9500, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina
[2] Comis Nacl Energia Atom, Av Bustillo 9500, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina
[3] Consejo Nacl Invest Cient & Tecn, Ctr Atom Bariloche, Av Bustillo 9500, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina
[4] Saarland Univ, Dept Mat Sci & Engn, D-66123 Saarbrucken, Germany
来源：
MATERIALS TODAY-PROCEEDINGS | 2019年 / 14卷
关键词：
thin films; microstructure; shape memory; SHAPE-MEMORY; GRAIN-SIZE; SUPERELASTICITY;
D O I：
10.1016/j.matpr.2019.05.061
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We study the thickness influence on the martensitic transformation in Cu-Al-Ni thin films grown by sputtering on Si (001). Thin films with thicknesses between 0.1 mu m and 2.25 mu m were grown at 563 K. The analysis of the microstructure reveals a columnar growth with preferred orientation Cu-Al-Ni L2(1) (001)[100]//Si (001)[100]. The martensitic transformation is strongly suppressed for films thinner than 1.3 mu m, which can be related with an interfacial layer imposing restitutive forces. This is evidenced in the extended transformation / retransformation ranges and in the absence of hysteresis for 0.15 mu m thick films. (C) 2019 Elsevier Ltd. All rights reserved.
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收藏
页码：96 / 99
页数：4
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