Investigation on antireflection coating for high resistance to potential-induced degradation

被引：32

作者：

Mishina, Ken ^{[1
]}

Ogishi, Atsufumi ^{[1
]}

Ueno, Kiyoshi ^{[2
]}

Doi, Takuya ^{[3
]}

Hara, Kohjiro ^{[3
]}

Ikeno, Norihiro ^{[4
]}

Imai, Daisuke ^{[1
]}

Saruwatari, Tetsuya ^{[1
]}

Shinohara, Makoto ^{[1
]}

Yamazaki, Toshiharu ^{[2
]}

Ogura, Atsushi ^{[4
]}

Ohshita, Yoshio ^{[5
]}

Masuda, Atsushi ^{[3
]}

机构：

[1] Shimadzu Co Ltd, Semicond Equipment Div, Hadano, Kanagawa 2591304, Japan

[2] Choshu Ind Co Ltd, Sanyo Onoda, Yamaguchi 7578511, Japan

[3] Natl Inst Adv Ind Sci & Technol, Tosu, Saga 8410052, Japan

[4] Meiji Univ, Kawasaki, Kanagawa 2148571, Japan

[5] Toyota Technol Inst, Nagoya, Aichi 4688511, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 03期

关键词：

SILICON-NITRIDE; PLASMA; FILMS;

D O I：

10.7567/JJAP.53.03CE01

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, we focus on the relationship between potential-induced degradation (PID) and characteristics of antireflection coating (ARC) on crystalline silicon solar cells. We evaluated the PID of general industrial multicrystalline p-type silicon solar cell groups with various ARCs. The module, which has an ARC deposited by plasma-enhanced chemical vapor deposition (PE-CVD) using a hollow cathode, indicated high resistance to PID with maintained conventional refractive index (RI). This ARC had properties of high conductivity and low oxygen concentration. It has the potential to suppress PID on crystalline silicon solar cells with maintained conventional RI. (C) 2014 The Japan Society of Applied Physics

引用

页数：4

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