High-selectivity anisotropic etching of single-crystal diamond by H plasma using iron catalysis

被引：11
|
作者：
Liu, Kang [1 ]
Lv, Zhijun [1 ]
Dai, Bing [1 ]
Shu, Guoyang [1 ]
Zhao, Jiwen [1 ]
Liu, Benjian [1 ]
Wang, Weihua [1 ]
Xue, Jingjing [1 ]
Yao, Kaili [1 ]
Sun, Mingqi [1 ]
Gao, Ge [1 ]
Wang, Yang [1 ]
Zhu, Jiaqi [1 ,2 ]
机构：
[1] Harbin Inst Technol, Ctr Composite Mat & Struct, Harbin 150080, Heilongjiang, Peoples R China
[2] Harbin Inst Technol, Minist Educ, Key Lab Microsyst & Microstruct Mfg, Harbin 150080, Heilongjiang, Peoples R China
来源：
DIAMOND AND RELATED MATERIALS | 2018年 / 86卷
基金：
中国国家自然科学基金; 对外科技合作项目（国际科技项目）;
关键词：
Diamond etching; Iron catalysis; H plasma; MPCVD; UV-PHOTODETECTORS; SYNTHETIC DIAMOND; CVD DIAMOND; FILMS; NANOPARTICLES; FABRICATION; SURFACE; FE7C3; FE; NI;
D O I：
10.1016/j.diamond.2018.04.026
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A highly selective anisotropic etching method for single-crystal diamond was investigated. After a thin film of Fe was deposited on the diamond surface, it was processed in H plasma activated by microwave plasma-assisted chemical vapor deposition (MPCVD). Spurred by the high catalytic activity of Fe, the diamond was easily etched, with masked areas (i.e., with no Fe deposition) remaining smooth or barely damaged. The etch rate was 180 nm min(-1). This method provides a simple and alternative way for diamond processing and patterning.
引用
收藏
页码：186 / 192
页数：7
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