A Sub-cm3 Energy-Harvesting Stacked Wireless Sensor Node Featuring a Near-Threshold Voltage IA-32 Microcontroller in 14-nm Tri-Gate CMOS for Always-ON Always-Sensing Applications

被引：48

作者：

Paul, Somnath ^{[1
]}

Honkote, Vinayak ^{[1
]}

Kim, Ryan Gary ^{[1
]}

Majumder, Turbo ^{[1
]}

Aseron, Paolo A. ^{[2
]}

Grossnickle, Vaughn ^{[3
]}

Sankman, Robert ^{[4
]}

Mallik, Debendra ^{[4
]}

Wang, Tao ^{[4
]}

Vangal, Sriram ^{[1
]}

Tschanz, James W. ^{[1
]}

De, Vivek ^{[1
]}

机构：

[1] Intel Corp, Circuit Res Lab, Hillsboro, OR 97124 USA

[2] Intel Corp, Silicon Technol Prototyping Lab, Hillsboro, OR 97124 USA

[3] Intel Corp, Platform Engn Grp, Santa Clara, CA 95051 USA

[4] Intel Corp, Assembly & Test Technol Dev, Chandler, AZ 85226 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2017年 / 52卷 / 04期

关键词：

Always-ON always-sensing (AOAS); energy harvesting; Intel Architecture (IA) Internet of things (IoT); microcontroller (MCU); near-threshold voltage (NTV); wireless sensor node (WSN);

D O I：

10.1109/JSSC.2016.2638465

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An energy-harvesting wireless sensor node (WSN) integrates a 14-nm, 0.79-mm(2), 32-b Intel Architecture core-based near-threshold voltage (NTV) microcontroller (MCU) that provides 17-mu W/MHz always-ON, always-sensing (AOAS) capability. The MCU implements four independent voltage-frequency islands, managed by an integrated power management unit and features a subthreshold voltage capable on-die oscillator and 42-nm fin-pitch, 8.3-pA leakage-per-bit SRAM. The MCU operates across a wide frequency (voltage) range from 297 MHz (1 V) to 0.5 MHz (308 mV), dissipating 23.5 mW to 21 mu W, and achieves 4.8x better energy efficiency at an optimum supply voltage (VOPT) of 370 mV, 3.5 MHz, and 17 pJ/cycle. A functional AOAS WSN incorporating the NTV MCU shows promise for sustained mu W operation.

引用

页码：961 / 971

页数：11

共 1 条

[1] An Energy Harvesting Wireless Sensor Node for IoT Systems Featuring a Near-Threshold Voltage IA-32 Microcontroller in 14nm Tri-Gate CMOS
Paul, Somnath
Honkote, Vinayak
Kim, Ryan
Majumder, Turbo
Aseron, Paolo
Grossnickle, Vaughn
Sankman, Robert
Mallik, Debendra
Jain, Sandeep
Vangal, Sriram
Tschanz, James
De, Vivek
2016 IEEE SYMPOSIUM ON VLSI CIRCUITS (VLSI-CIRCUITS), 2016,

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