Surface HCl treatment in ZnO photoconductive sensors

被引：22

作者：

Chang, S. P. ^{[1
,2
]}

Chuang, R. W. ^{[1
,2
,3
]}

Chang, S. J. ^{[1
,2
]}

Lu, C. Y. ^{[1
,2
]}

Chiou, Y. Z. ^{[4
]}

Hsieh, S. F. ^{[5
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan

[3] Natl Nano Device Labs, Tainan 74147, Taiwan

[4] So Taiwan Univ Technol, Dept Elect Engn, Tainan 710, Taiwan

[5] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Tainan 70101, Taiwan

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 17期

关键词：

ZnO; Photoconductive sensor; 1/f noise; Responsivity; Surface treatment; MOLECULAR-BEAM EPITAXY; CHEMICAL-VAPOR-DEPOSITION; ZNSE MSM PHOTODETECTORS; GAN CAP LAYERS; ULTRAVIOLET PHOTODETECTORS; THIN-FILMS; PLASMA; GROWTH; SAPPHIRE; CONTACTS;

D O I：

10.1016/j.tsf.2009.03.042

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we report the effect of surface HCl treatment on ZnO photoconductive sensors with Ni/Au electrodes after the etching process. Epitaxial ZnO photoconductive sensor film on sapphire substrates was fabricated and then treated with different HCl concentrations. With an incident light wavelength of 370 nm and an applied bias of 10 V, the responsivity of the sensor measured is around 141 mA/W after being treated with 0.7% HCl solution. The result indicates that the a larger surface available for photodetection could be realized by increasing the surface roughness of the ZnO photoconductive sensor. It was also found that the low-frequency and high-frequency noises of the fabricated sensors were dominated by 1/f-type and shot noises, respectively. (c) 2009 Elsevier B.V. All rights reserved.

引用

页码：5050 / 5053

页数：4

共 34 条

[21] Ultraviolet detection with ultrathin ZnO epitaxial films treated with oxygen plasma
Liu, MJ
Kim, HK
[J]. APPLIED PHYSICS LETTERS, 2004, 84 (02) : 173 - 175
[22] Recent advances in ZnO materials and devices
Look, DC
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 80 (1-3): : 383 - 387
[23] Ultraviolet photodetectors with ZnO nanowires prepared on ZnO:Ga/glass templates
Lu, Chien-Yuan
Chang, Shoou-Jinn
Chang, Sheng-Po
Lee, Ching-Ting
Kuo, Che-Fu
Chang, Hong-Ming
Chiou, Yu-Zung
Hsu, Cheng-Liang
Chen, I-Cherng
[J]. APPLIED PHYSICS LETTERS, 2006, 89 (15)
[24] Noise characteristics of ZnO-nanowire photodetectors prepared on ZnO: Ga/glass templates
Lu, Chien-Yuan
Chang, Sheng-Po
Chang, Shoou-Jinn
Chiou, Yu-Zung
Kuo, Che-Fu
Chang, Hong-Ming
Hsu, Cheng-Liang
Chen, I-Cherng
[J]. IEEE SENSORS JOURNAL, 2007, 7 (7-8) : 1020 - 1024
[25] Control of surface morphology of ZnO (0 0 0(1)over-bar) by hydrochloric acid etching
Maki, H
Ikoma, T
Sakaguchi, I
Ohashi, N
Haneda, H
Tanaka, J
Ichinose, N
[J]. THIN SOLID FILMS, 2002, 411 (01) : 91 - 95
[26] BAND-GAPS, CRYSTAL-FIELD SPLITTING, SPIN-ORBIT-COUPLING, AND EXCITON BINDING-ENERGIES IN ZNO UNDER HYDROSTATIC-PRESSURE
MANG, A
REIMANN, K
RUBENACKE, S
[J]. SOLID STATE COMMUNICATIONS, 1995, 94 (04) : 251 - 254
[27] Different bias-voltage dependences of photocurrent in Pt/InGaN/GaN and Pt/GaN Schottky photodetectors on sapphire
Ohsawa, J
Kozawa, T
Ishigur, O
Itoh, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (12-16): : L435 - L437
[28] UV-detector based on pn-heteroj unction diode composed of transparent oxide semiconductors, p-NiO/n-ZnO
Ohta, H
Kamiya, M
Kamaiya, T
Hirano, M
Hosono, H
[J]. THIN SOLID FILMS, 2003, 445 (02) : 317 - 321
[29] Growth of ZnO by molecular beam epitaxy using NO2 as oxygen source
Sakurai, K
Iwata, D
Fujita, S
Fujita, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (4B): : 2606 - 2608
[30] Tudose IV, 2007, APPL PHYS A-MATER, V89, P57, DOI [10.1007/s00339-007-4036-3, 10.1007/s00339-007-40363]

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