Surface HCl treatment in ZnO photoconductive sensors

被引:22
作者
Chang, S. P. [1 ,2 ]
Chuang, R. W. [1 ,2 ,3 ]
Chang, S. J. [1 ,2 ]
Lu, C. Y. [1 ,2 ]
Chiou, Y. Z. [4 ]
Hsieh, S. F. [5 ]
机构
[1] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan
[3] Natl Nano Device Labs, Tainan 74147, Taiwan
[4] So Taiwan Univ Technol, Dept Elect Engn, Tainan 710, Taiwan
[5] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Tainan 70101, Taiwan
关键词
ZnO; Photoconductive sensor; 1/f noise; Responsivity; Surface treatment; MOLECULAR-BEAM EPITAXY; CHEMICAL-VAPOR-DEPOSITION; ZNSE MSM PHOTODETECTORS; GAN CAP LAYERS; ULTRAVIOLET PHOTODETECTORS; THIN-FILMS; PLASMA; GROWTH; SAPPHIRE; CONTACTS;
D O I
10.1016/j.tsf.2009.03.042
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, we report the effect of surface HCl treatment on ZnO photoconductive sensors with Ni/Au electrodes after the etching process. Epitaxial ZnO photoconductive sensor film on sapphire substrates was fabricated and then treated with different HCl concentrations. With an incident light wavelength of 370 nm and an applied bias of 10 V, the responsivity of the sensor measured is around 141 mA/W after being treated with 0.7% HCl solution. The result indicates that the a larger surface available for photodetection could be realized by increasing the surface roughness of the ZnO photoconductive sensor. It was also found that the low-frequency and high-frequency noises of the fabricated sensors were dominated by 1/f-type and shot noises, respectively. (c) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:5050 / 5053
页数:4
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