Evidence of Supercoupling Effect in Ultrathin Silicon Layers Using a Four-Gate MOSFET

被引：24

作者：

Cristoloveanu, S. ^{[1
]}

Athanasiou, S. ^{[1
,2
]}

Bawedin, M. ^{[1
]}

Galy, Ph. ^{[2
]}

机构：

[1] Minatec, Grenoble Inst Technol, LAboratoire Hyperfrequences & Caracterisat, Inst Microelect Electromagnetisme & Photon, F-38016 Grenoble 1, France

[2] STMicroelectronics, F-38926 Crolles, France

来源：

IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 02期

关键词：

FDSOI MOSFET; four-gate transistor; silicon-on-insulator; supercoupling; SOI MOSFETS; THRESHOLD VOLTAGE; FILM; MOBILITY;

D O I：

10.1109/LED.2016.2637563

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The supercoupling effect is demonstrated experimentally by monitoring the electron and hole currents in a field-effect transistor provided with p(+) and n(+) contacts. According to the polarity of the voltage applied to the front and back gates, only electrons or holes can be detected in 7-nm thick silicon layers. Thicker layers are not affected by supercoupling and can accommodate electrons and holes together.

引用

收藏

页码：157 / 159

页数：3

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