High linearity performances of GaNHEMT devices on silicon substrate at 4 GHz

被引：19

作者：

Vellas, N ^{[1
]}

Gaquiere, C

Guhel, Y

Werquin, M

Bue, F

Aubry, R

Delage, S

Semond, F

De Jaeger, JC

机构：

[1] THALES, TRT, IEMN, CNRS,UMR 8520,DHS, F-59652 Villeneuve Dascq, France

[2] THALES, LCR, F-91404 Orsay, France

[3] CNRS, CRHEA, F-06560 Valbonne, France

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 08期

关键词：

AlGaN/GaN; high resistive silicon (111) substrate; intermodulation ratio; load impedance; microwave power;

D O I：

10.1109/LED.2002.801328

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we demonstrate that, for high linearity application, GaN devices benefit from their high drain-source bias voltages. An improvement up to 20 dB in intermodulation ratio can be observed at high power levels compared to usual GaAs PHEMT devices. This study demonstrates that the high bandgap GaN devices are ideal candidates for the applications requiring high power and linearity simultaneously.

引用

页码：461 / 463

页数：3

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