Interface-Induced Modulation of Charge and Polarization in Thin Film Fe3O4

被引：17

作者：

Tian, He ^{[1
]}

Verbeeck, Jo ^{[1
]}

Brueck, Sebastian ^{[2
,3
]}

Paul, Markus ^{[2
,3
]}

Kufer, Dominik ^{[2
,3
]}

Sing, Michael ^{[2
,3
]}

Claessen, Ralph ^{[2
,3
]}

Van Tendeloo, Gustaaf ^{[1
]}

机构：

[1] Univ Antwerp, EMAT, Antwerp, Belgium

[2] Univ Wurzburg, Inst Phys, Wurzburg, Germany

[3] Univ Wurzburg, Roentgen Res Ctr Complex Mat Syst, Wurzburg, Germany

来源：

ADVANCED MATERIALS | 2014年 / 26卷 / 03期

基金：

欧洲研究理事会;

关键词：

charge modulation; polarization modulation; oxide interface; ABF STEM; monochromated EELS; MAGNETITE FE3O4; QUANTIFICATION; ENERGY;

D O I：

10.1002/adma.201303329

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Charge and polarization modulations in Fe3O4 are controlled by taking advantage of interfacial strain effects. The feasibility of oxidation state control by strain modification is demonstrated and it is shown that this approach offers a stable configuration at room temperature. Direct evidence of how a local strain field changes the atomic coordination and introduces atomic displacements leading to polarization of Fe ions is presented. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：461 / 465

页数：5

共 26 条

[1] Ferroelectric Switching in Multiferroic Magnetite (Fe3O4) Thin Films [J].