Nanoscale Probing of Interfaces in GaN for Devices Applications

被引：2

作者：

Giannazzo, F. ^{[1
]}

Scuderi, A. ^{[2
]}

Greco, G. ^{[1
]}

Fiorenza, P. ^{[1
]}

Lo Nigro, R. ^{[1
]}

Leszczynski, M. ^{[3
]}

Roccaforte, F. ^{[1
]}

机构：

[1] CNR IMM, Str 8,5 Zona Ind, I-95121 Catania, Italy

[2] STMicroelect, I-95121 Catania, Italy

[3] Inst High Pressure Phys, PL-01142 Warsaw, Poland

来源：

GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 2 | 2012年 / 50卷 / 03期

关键词：

TRANSPORT;

D O I：

10.1149/05003.0439ecst

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This work reviews some of the results achieved at CNR-IMM in the last years on nanoscale probing of interfaces in gallium nitride (GaN) for devices applications. A special emphasis will be given to the insights obtained using high resolution techniques based on scanning probe microscopy (SPM), often employed in combination with conventional macroscopic measurements. Some aspects related to GaN interfaces that are relevant for devices technology, i. e. Schottky and Ohmic contacts, will be discussed as examples.

引用

页码：439 / 446

页数：8

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