Damage evolution and surface defect segregation in low-energy ion-implanted silicon

We have combined computer simulations and atomic-resolution tunneling microscopy to investigate the kinetics of defect migration during annealing of ion implanted Si(III)-7x7, Using atomically-clean and flat surfaces as sinks for bulk point defects introduced by the irradiation, we observe distinct, temperature-dependent surface arrival rates for vacancies and interstitials and we demonstrate that the distinct kinetics of each type of bulk point defect govern their surface segregation kinetics. A combination of simulation tools provides a detailed description of the processes that underlie the observed temperature-dependence of defect migration. (C) 1997 American Institute of Physics.