Nonlinear optical response of nc-Si-SiO2 films studied with femtosecond four-wave mixing technique

被引：2
|
作者：
Guo Heng-Qun [1 ]
Wang Qi-Ming
机构：
[1] Huaqiao Univ, Coll Informat Sci & Technol, Quanzhou 362021, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2006年 / 23卷 / 11期
关键词：
3RD-ORDER; TIME; GAAS;
D O I：
10.1088/0256-307X/23/11/029
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Nonlinear optical properties of silicon nanocrystals (nc-Si) embedded in SiO2 films are investigated using time-resolved four-wave mixing technique with a femtosecond laser. the off-resonant third-order nonlinear susceptibility chi((3)) is observed to be 1.3 x 10(-10) esu at 800 nm. The relaxation time of the film is fast as short as 50 fs. The off-resonant nonlinearity is predominantly electronic in origin and enhanced due to quantum confinement.
引用
收藏
页码：2989 / 2992
页数：4
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