N-channel 3C-SiC MOSFETs on silicon substrate

被引：36

作者：

Wan, JW ^{[1
]}

Capano, MA ^{[1
]}

Melloch, MR ^{[1
]}

Cooper, JA ^{[1
]}

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 08期

关键词：

carrier mobility; MOSFETs; silicon compounds;

D O I：

10.1109/LED.2002.801259

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Inversion-mode, n-channel 3C-SiC MOSFETs have been fabricated in a 3C-SiC epilayer grown on a 2degrees-off-axis Si(001) substrate with optimized SiC processing techniques. Phosphorus implantations are employed for source/drain formation and a sheet resistance of 70 Omega per square is obtained after annealing at 1250 degreesC for 30 min in argon. Both drain characteristics and subthreshold characteristics show typical transistor behavior with an effective channel mobility of 165 cm(2)/Vs. The breakdown field of the gate oxide is about 3.5 MV/cm.

引用

页码：482 / 484

页数：3

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