A temperature compensated dual beam pressure sensor

被引:19
作者
Melvås, P [1 ]
Kälvesten, E [1 ]
Stemme, G [1 ]
机构
[1] Royal Inst Technol, RTH, Dept Signals Densors & Sensors Instrumentat S3, S-10044 Stockholm, Sweden
关键词
temperature compensation; pressure sensor; miniaturized; force transducing beam;
D O I
10.1016/S0924-4247(02)00147-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The first temperature compensated leverage beam pressure sensor fabricated by surface micromachining is presented. The pressure- sensing element consists of a piezoresistor on an 80 mum x 40 mum x 1 mum double end supported force transducing beam. The beam is located beneath a (100 mum x 100 mum x 2 mum) square polysilicon diaphragm having its ends attached to the diaphragm and to the cavity edge, thus, entirely enclosed inside the vacuum cavity. The thermal compensation piezoresistor is also located in the cavity on a (100 mum x 40 mum x 1 mum beam to achieve nearly identical thermal conditions. Both ends of this beam are attached to the cavity edge and is therefore, pressure-insensitive. The new design enables a combination of high pressure sensitivity (0.8 muV/(V mmHg)), environmental isolation and a decrease of the relative temperature dependency mismatch from 6 to 3% compared to a commercialized traditional piezoresistive pressure sensor. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:46 / 53
页数:8
相关论文
共 20 条
[1]   A novel MEMS pressure sensor fabricated on an optical fiber [J].
Abeysinghe, DC ;
Dasgupta, S ;
Boyd, JT ;
Jackson, HE .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2001, 13 (09) :993-995
[2]   A FULLY INTEGRATED TEMPERATURE COMPENSATION TECHNIQUE FOR PIEZORESISTIVE PRESSURE SENSORS [J].
AKBAR, M ;
SHANBLATT, MA .
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1993, 42 (03) :771-775
[3]  
BRYZEK J, 1988, P IEEE SOL STAT SENS, P121
[4]  
CHAU HL, 1987, IEEE T ELECTRON DEV, V34, P850, DOI 10.1109/T-ED.1987.23006
[5]   COMPENSATION OF SENSITIVITY SHIFT IN PIEZORESISTIVE PRESSURE SENSORS USING LINEAR VOLTAGE EXCITATION [J].
GAKKESTAD, J ;
OHLCKERS, P ;
HALBO, L .
SENSORS AND ACTUATORS A-PHYSICAL, 1995, 49 (1-2) :11-15
[6]   A self-compensated ceramic strain gage for use at elevated temperatures [J].
Gregory, OJ ;
Luo, Q .
SENSORS AND ACTUATORS A-PHYSICAL, 2001, 88 (03) :234-240
[7]  
GUCKEL H, 1987, P 4 INT C SOL STAT S, P277
[8]   Development and characterisation of a surface micromachined FET pressure sensor on a CMOS process [J].
Hynes, E ;
O'Neill, M ;
McAuliffe, D ;
Berney, H ;
Lane, WA ;
Kelly, G ;
Hill, M .
SENSORS AND ACTUATORS A-PHYSICAL, 1999, 76 (1-3) :283-292
[9]   AN ULTRAMINIATURE CMOS PRESSURE SENSOR FOR A MULTIPLEXED CARDIOVASCULAR CATHETER [J].
JI, J ;
CHO, ST ;
ZHANG, Y ;
NAJAFI, K ;
WISE, KD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (10) :2260-2267
[10]  
Kalvesten E, 1998, MICRO ELECTRO MECHANICAL SYSTEMS - IEEE ELEVENTH ANNUAL INTERNATIONAL WORKSHOP PROCEEDINGS, P574