Study of Ho-doped Bi2Te3 topological insulator thin films

被引：25

作者：

Harrison, S. E. ^{[1
,2
]}

Collins-McIntyre, L. J. ^{[1
]}

Zhang, S. L. ^{[1
]}

Baker, A. A. ^{[1
,3
]}

Figueroa, A. I. ^{[3
]}

Kellock, A. J. ^{[4
]}

Pushp, A. ^{[4
]}

Chen, Y. L. ^{[1
]}

Parkin, S. S. P. ^{[4
]}

Harris, J. S. ^{[2
]}

van der Laan, G. ^{[3
]}

Hesjedal, T. ^{[1
]}

机构：

[1] Univ Oxford, Clarendon Lab, Dept Phys, Oxford OX1 3PU, England

[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[3] Diamond Light Source, Magnet Spect Grp, Didcot OX11 0DE, Oxon, England

[4] IBM Almaden Res Ctr, San Jose, CA 95120 USA

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 18期

基金：

英国工程与自然科学研究理事会;

关键词：

MASSIVE DIRAC FERMION; SURFACE;

D O I：

10.1063/1.4935235

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Breaking time-reversal symmetry through magnetic doping of topological insulators has been identified as a key strategy for unlocking exotic physical states. Here, we report the growth of Bi2Te3 thin films doped with the highest magnetic moment element Ho. Diffraction studies demonstrate high quality films for up to 21% Ho incorporation. Superconducting quantum interference device magnetometry reveals paramagnetism down to 2 K with an effective magnetic moment of similar to 5 mu(B)/Ho. Angle-resolved photoemission spectroscopy shows that the topological surface state remains intact with Ho doping, consistent with the material's paramagnetic state. The large saturation moment achieved makes these films useful for incorporation into heterostructures, whereby magnetic order can be introduced via interfacial coupling. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

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