Effects of Interface Layers and Domain Walls on the Ferroelectric-Resistive Switching Behavior of Au/BiFeO3/La0.6Sr0.4MnO3 Heterostructures

被引：24

作者：

Feng, Lei ^{[1
]}

Yang, Shengwei ^{[1
]}

Lin, Yue ^{[1
]}

Zhang, Dalong ^{[1
]}

Huang, Weichuan ^{[1
]}

Zhao, Wenbo ^{[1
]}

Yin, Yuewei ^{[1
]}

Dong, Sining ^{[1
]}

Li, Xiaoguang ^{[1
,2
]}

机构：

[1] Univ Sci & Technol China, Dept Phys, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China

[2] Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China

来源：

ACS APPLIED MATERIALS & INTERFACES | 2015年 / 7卷 / 47期

关键词：

ferroelectric heterostructures; resistive switching; interface layer; domain walls; ion interdiffusion; POLARIZATION-CONTROL; ELECTRORESISTANCE; MAGNETORESISTANCE; CONDUCTION; EXCHANGE;

D O I：

10.1021/acsami.5b10210

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The electric field effects on the electric and magnetic properties in multiferroic heterostructures are important for not only understanding the mechanisms of certain novel physical phenomena occurring at heterointerfaces but also offering a route for promising spintronic applications. Using the Au/BiFeO3/La0.6Sr0.4MnO3 (Au/BFO/LSMO) multiferroic heterostructure as a model system, we investigated the ferroelectric-resistive switching (RS) behaviors of the heterostructure. Via the manipulation of the BFO ferroelectric polarizations, the nonvolatile tristate of RS is observed, which is closely related to the Au/BFO and BFO/LSMO interface layers and the highly conducting BFO domain walls (DWs). More interestingly, according to the magnetic field dependence of the RS behavior, the negative magnetoresistance effect of the third resistance state, corresponding to the abnormal current peak in current-pulse voltage hysteresis near the electric coercive field, is also observed at room temperature, which mainly arises from the possible oxygen vacancy accumulation and Fe ion valence variation in the DWs.

引用

页码：26036 / 26042

页数：7

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