Accelerated gate-oxide breakdown in mixed-voltage I/O circuits

被引：30

作者：

Furukawa, T

Turner, D

Mittl, S

Maloney, M

Serafin, R

Clark, W

Bialas, J

Longenbach, L

Howard, J

机构：

来源：

1997 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 35TH ANNUAL | 1997年

关键词：

D O I：

10.1109/RELPHY.1997.584255

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a new mechanism of gate-oxide breakdown fails observed in mixed-voltage I/O circuits during an accelerated product stress. Although no gate-oxide breakdown was expected from Fowler-Nordheim stress, gate-oxide fails were observed only in short-channel PFETs of the mixed-voltage I/O circuits. Accelerated gate-oxide breakdown was attributed to non-conductive channel hot-electron injection at the drain edge.

引用

页码：169 / 173

页数：5