Effect of Depolarizing Field and Charged Dopants on Polarization in Polycrystalline Pb(ZrTi)O3 Film

被引：5

作者：

Delimova, L. A. ^{[1
]}

Yuferev, V. S. ^{[1
]}

机构：

[1] Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia

来源：

INTEGRATED FERROELECTRICS | 2009年 / 108卷

关键词：

Polarization charge; grain boundary; depolarizing field; polarization;

D O I：

10.1080/10584580903324634

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A two-dimensional model taking into account the reciprocal effect of electric field on polarization as well as variation of the polarization from saturated to minor hysteresis loops is developed for polycrystalline Pb(ZrTi)O-3(PZT) film, where ferroelectric PZT grains are separated by ultrathin semiconductor PbO interlayers. Using the model, it is shown that the depolarizing field, produced by uncompensated polarization charge, strongly depresses the polarization not only on grain boundaries but at appreciable distance inside the grain. The charged dopants in the film cannot suppress the depolarizing field. Instead, the dopants strengthen the coordinate dependency of the polarization along the grain.

引用

页码：116 / 124

页数：9

共 16 条

[1] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J].

CROWELL, CR ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1035-&

[2] Ageing of thin-film capacitor structures based on PZT [J].

Delimova, L. A. ;

Grekhov, I. V. ;

Mashovets, D. V. ;

Titkov, I. E. ;

Afanasjev, V. P. ;

Afanasjev, P. V. ;

Kramar, G. P. ;

Petrov, A. A. .

FERROELECTRICS, 2007, 348 :427-+

[3] Thin-Film Capacitor M/Pb(ZrTi)O3/M as a Polarization-Sensitive Photocell [J].

Delimova, L. A. ;

Yuferev, V. S. ;

Grekhov, I. V. ;

Petrov, A. A. ;

Fedorov, K. A. ;

Afanasjev, V. P. .

PHYSICS OF THE SOLID STATE, 2009, 51 (06) :1217-1222

[4] Origin of photoresponse in heterophase ferroelectric Pt/Pb(ZrTi)O3/Ir capacitors [J].

Delimova, L. A. ;

Yuferev, V. S. ;

Grekhov, I. V. ;

Afanasjev, P. V. ;

Kramar, G. P. ;

Petrov, A. A. ;

Afanasjev, V. P. .

APPLIED PHYSICS LETTERS, 2007, 91 (11)

[5] Photovoltaic Effect Based on Polarization Charge in Polycrystalline Pb(ZrTi)O3 Film [J].

Delimova, L. A. ;

Mashovets, D. V. ;

Yuferev, V. S. .

INTEGRATED FERROELECTRICS, 2008, 102 (01) :37-43

[6] Transient-current measurement of the trap charge density at interfaces of a thin-film metal/ferroelectric/metal structure [J].

Delimova, LA ;

Grekhov, IV ;

Mashovets, DV ;

Tyaginov, SE ;

Shin, S ;

Koo, JM ;

Kim, SP ;

Park, Y .

APPLIED PHYSICS LETTERS, 2005, 87 (19) :1-3

[7]

GURO GM, 1968, FIZ TVERD TELA+, V10, P100

[8]

GURO GM, 1969, PHYS SOLID STATE, V11, P1956

[9]

IZVOZCHIKOV V, 1979, L D ENERGY

[10] PHYSICS OF THE FERROELECTRIC NONVOLATILE MEMORY FIELD-EFFECT TRANSISTOR [J].

MILLER, SL ;

MCWHORTER, PJ .

JOURNAL OF APPLIED PHYSICS, 1992, 72 (12) :5999-6010

← 1 2 →