Tunneling Enhanced Structure for Improving the Performance of Ultraviolet Light-emitting Diodes

被引：0
作者：
Wu, Jinxing [1 ]
Li, Peixian [1 ]
Zhou, Xiaowei [1 ]
机构：
[1] Xidian Univ, Sch Adv Mat & Nanotechnol, Wide Bandgap Semicond Technol Disciplines State K, Xian 710071, Peoples R China
来源：
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | 2020年 / 20卷 / 06期
基金：
国家重点研发计划; 中国国家自然科学基金;
关键词：
Tunneling; AlGaN; ultraviolet; light-emitting diodes; hole injection efficiency; light output power; POLARIZATION;
D O I：
10.5573/JSTS.2020.20.6.552
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The novel AlGaN-based ultraviolet light-emitting diode (UV-LED) with a tunneling enhancement structure is proposed. The tunneling enhanced structure consists of an ITO layer, an extremely thin AlN layer, and a p(+)-GaN layer. Under forward bias, compared to traditional devices, tunneling enhanced UV-LEDs can shorten the width of the tunneling region. In addition, the dielectric constant of the AlN layer in the tunnel area is small, which can effectively increase the transport of holes from the ITO layer to the MQWs active region. Due to the increased hole concentration and drift speed, for a 300 mu m x 254 mu m UV-LED chip, the optical output power increased by 19.6% at 120 mA. Therefore, the proposed tunneling enhanced structure provides a simple and effective way to increase the light output power of UV-LEDs.
引用
收藏
页码：552 / 557
页数：6
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