Ferroelectric HfZrOx Ge and GeSn PMOSFETs with Sub-60 mV/decade Subthreshold Swing, Negligible Hysteresis, and Improved IDS

被引：177

作者：

Zhou, Jiuren ^{[1
]}

Han, Genquan ^{[1
]}

Li, Qinglong ^{[1
]}

Peng, Yue ^{[1
]}

Lu, Xiaoli ^{[1
]}

Zhang, Chunfu ^{[1
]}

Zhang, Jincheng ^{[1
]}

Sun, Qing-Qing ^{[2
]}

Zhang, David Wei ^{[2
]}

Hao, Yue ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond, Xian 710071, Shaanxi, Peoples R China

[2] Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China

来源：

2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2016年

关键词：

NEGATIVE CAPACITANCE;

D O I：

10.1109/IEDM.2016.7838401

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the first ferroelectric (FE) HfZrOx (HZO) Ge and GeSn pMOSFETs with sub-60 mV/decade subthreshold swing (SS) (40 similar to 43 mV/decade), negligible hysteresis, and enhanced I-DS. With a RTA at 450 degrees C, FE devices with reduced hysteresis of 40 similar to 60 mV demonstrate the significantly improved SS and I-DS characteristics compared to control devices without FE, owing to the negative capacitance (NC) effect induced by HZO. FE Ge and GeSn pFETs achieve 22% and 20% I-DS enhancement than control devices, respectively, at the drive voltage of 1.0 V. NC effect in FE devices is proved by the gate leakage and inversion capacitance characteristics.

引用

页数：4

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