Hybrid nano-scale Au with ITO structure for a high-performance near-infrared silicon-based photodetector with ultralow dark current

被引：45

作者：

Li, Xinxin ^{[1
,2
,3
]}

Deng, Zhen ^{[1
,3
,4
]}

Li, Jun ^{[1
,3
]}

Li, Yangfeng ^{[1
,3
]}

Guo, Linbao ^{[1
,2
,3
]}

Jiang, Yang ^{[1
,3
]}

Ma, Ziguang ^{[1
,2
]}

Wang, Lu ^{[1
,3
]}

Du, Chunhua ^{[1
,3
,4
]}

Wang, Ying ^{[5
]}

Meng, Qingbo ^{[1
,3
]}

Jia, Haiqiang ^{[1
,3
,6
]}

Wang, Wenxin ^{[1
,3
,6
]}

Liu, Wuming ^{[1
]}

Chen, Hong ^{[1
,3
,6
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Key Lab Renewable Energy, Beijing Key Lab New Energy Mat & Devices,Beijing, Beijing 100190, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Univ Chinese Acad Sci, Ctr Mat & Optoelect Engn, Beijing 100049, Peoples R China

[4] Yangtze River Delta Phys Res Ctr, Liyang 213000, Peoples R China

[5] Beijing Jiaotong Univ, Sch Sci, Dept Phys, Beijing 100044, Peoples R China

[6] Songshan Lake Mat Lab, Dongguan 523808, Peoples R China

来源：

PHOTONICS RESEARCH | 2020年 / 8卷 / 11期

基金：

中国国家自然科学基金;

关键词：

HIGH-RESPONSIVITY; ABSORPTION; WAVELENGTH; DEPOSITION; DETECTOR;

D O I：

10.1364/PRJ.398450

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

An internal photoemission-based silicon photodetector detects light below the silicon bandgap at room temperature and can exhibit spectrally broad behavior, making it potentially suited to meet the need for a near-infrared pure Si photodetector. In this work, the implementation of a thin Au insertion layer into an ITO/n-Si Schottky photodetector can profoundly affect the barrier height and significantly improve the device performance. By fabricating a nanoscale thin Au layer and an ITO electrode on a silicon substrate, we achieve a well-behaved ITO/Au/n-Si Schottky diode with a record dark current density of 3.7 x 10(-7) A/cm(2) at -1 V and a high rectification ratio of 1.5 x 10(8) at +/- 1 V. Furthermore, the responsivity has been obviously improved without sacrificing the dark current performance of the device by decreasing the Au thickness. Such a silicon-based photodetector with an enhanced performance could be a promising strategy for the realization of a monolithic integrated pure silicon photodetector in optical communication. (C) 2020 Chinese Laser Press

引用

页码：1662 / 1670

页数：9

共 42 条

[11] Schottky Photodiodes in Bulk CMOS for High-Speed 1310/1550 nm Optical Receivers [J].