Characterization of homoepitaxial diamond by Raman spectroscopy

被引：0
|
作者：
Saito, H [1 ]
Imai, T [1 ]
机构：
[1] Sumitomo Elect Ind Ltd, Itami Res Lab, Itami, Hyogo 6640016, Japan
来源：
NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY | 1999年 / 9卷 / 02期
关键词：
diamond; homoepitaxial growth; Raman spectroscopy; internal stress;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：122 / 122
页数：1
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