The study of external growth environments on the crystal morphology of ε-HNIW by molecular dynamics simulation

被引:35
作者
Lan, Guanchao [1 ]
Jin, Shaohua [1 ]
Li, Jing [1 ]
Wang, Junying [1 ]
Li, Jinxin [2 ]
Chen, Shusen [1 ]
Li, Lijie [1 ]
机构
[1] Beijing Inst Technol, Sch Mat Sci & Engn, Beijing 100081, Peoples R China
[2] Gansu Yin Guang Chem Ind Grp Co Ltd, Baiyin 730900, Peoples R China
关键词
SOLVENT ADSORPTION; ATTACHMENT ENERGY; CRYSTALLIZATION; RDX;
D O I
10.1007/s10853-018-2543-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Attachment energy model was adopted to research the influence of external growth environments on epsilon-HNIW crystal morphology. The morphology of epsilon-HNIW crystal in acetone-cyclohexane binary systems was simulated with cyclohexane mass fraction of 0.05, 0.10, 0.15 and 0.20, respectively. The influences of 0.80 acetone on epsilon-HNIW morphology were studied in the acetone-toluene, acetone-benzene and acetone-dichloromethane binary system. Besides, the effects of the temperature and supersaturation on epsilon-HNIW crystal morphology were also examined in the acetone-cyclohexane system. The simulation results reveal that epsilon-HNIW crystal morphology almost maintains consistent with the increase in cyclohexane ratio. Contrarily, the variations of the anti-solvent, the temperature and the supersaturation affect epsilon-HNIW crystal morphology dramatically. Furthermore, the influence of model dimension on the attachment energy was discussed, and a reasonable model size was obtained. The radial distribution function analysis was performed to explore the adsorption and diffusion behaviours of the solvent molecules on the epsilon-HNIW surfaces. Overall, the simulation results can provide some guidance for the crystallization process of epsilon-HNIW.
引用
收藏
页码:12921 / 12936
页数:16
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