Ultraviolet Laser Damage Dependence on Contamination Concentration in Fused Silica Optics during Reactive Ion Etching Process

被引:7
作者
Sun, Laixi [1 ]
Shao, Ting [1 ]
Shi, Zhaohua [1 ]
Huang, Jin [1 ]
Ye, Xin [1 ]
Jiang, Xiaodong [2 ]
Wu, Weidong [3 ]
Yang, Liming [1 ]
Zheng, Wanguo [3 ]
机构
[1] China Acad Engn Phys, Res Ctr Laser Fus, Mianyang 621900, Peoples R China
[2] China Acad Engn Phys, Res Ctr Laser Fus, Sci & Technol Plasma Phys Lab, Mianyang 621900, Peoples R China
[3] Shanghai Jiao Tong Univ, IFSA Collaborat Innovat Ctr, Shanghai 200240, Peoples R China
基金
中国国家自然科学基金;
关键词
fused silica; contamination; reactive ion etching; laser damage; optical performance; SURFACE DAMAGE; PLASMA; SUBSURFACE; MITIGATION; THRESHOLD; FABRICATION; TRANSITION; PRECURSORS; CHEMISTRY; EMISSION;
D O I
10.3390/ma11040577
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The reactive ion etching (RIE) process of fused silica is often accompanied by surface contamination, which seriously degrades the ultraviolet laser damage performance of the optics. In this study, we find that the contamination behavior on the fused silica surface is very sensitive to the RIE process which can be significantly optimized by changing the plasma generating conditions such as discharge mode, etchant gas and electrode material. Additionally, an optimized RIE process is proposed to thoroughly remove polishing-introduced contamination and efficiently prevent the introduction of other contamination during the etching process. The research demonstrates the feasibility of improving the damage performance of fused silica optics by using the RIE technique.
引用
收藏
页数:14
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