20•5% efficient silicon solar cell with a low temperature rear side process using laser-fired contacts

被引：38
作者：
Brendle, W.
Nguyen, V. X.
Grohe, A.
Schneiderloechner, E.
Rau, U.
Pallinger, G.
Werner, J. H.
机构：
[1] Univ Stuttgart, Inst Phys Elekt, D-70569 Stuttgart, Germany
[2] Fraunhofer Inst Solar Energy Syst, D-79110 Freiburg, Germany
[3] Deutsch Cell GmbH, D-09599 Freiberg, Germany
来源：
PROGRESS IN PHOTOVOLTAICS | 2006年 / 14卷 / 07期
关键词：
passivation; amorphous silicon; light trapping; silicon nitride;
D O I：
10.1002/pip.696
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The paper presents a rear side structure for crystalline silicon solar cells, which is processed at a maximum temperature of 220 degrees C. Using two different material compositions for electrical and optical needs, the layer system has excellent passivation properties, enhances light trapping and allows for a good ohmic contact. With this structure we achieve an independently confirmed conversion efficiency eta =20 center dot 5% on a 250 mu m thick silicon solar cell. Due to the fact that the maximum process temperature is 220 degrees C, this layer system enables new solar cell concepts. Copyright (C) 2006 John Wiley & Sons, Ltd.
引用
收藏
页码：653 / 662
页数：10
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