Simple and accurate procedure for modeling erbium-doped waveguide amplifiers with high concentration

被引：29

作者：

Vermelho, MVD ^{[1
]}

Peschel, U ^{[1
]}

Aitchison, JS ^{[1
]}

机构：

[1] Univ Glasgow, Dept Elect & Elect Engn, Glasgow G12 8QQ, Lanark, Scotland

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 2000年 / 18卷 / 03期

关键词：

erbium; integrated optoelectronics; laser amplifiers; luminescent devices; nonlinear systems; optical amplifiers; optoelectronic devices;

D O I：

10.1109/50.827513

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present an accurate, fast, and easily implemented procedure for modeling erbium-doped waveguide amplifiers (EDWA's) with high concentration doping level. The model is shown to be in a very good agreement when compared with experimental results, and is used in a detailed analysis of a waveguide amplifier with 980-nm pumping.

引用

页码：401 / 408

页数：8

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