EFFECT OF TANTALUM ON FERROELECTRIC PHASE TRANSITION BEHAVIOR OF SrBi4Ti4O15 SINTERED DISCS
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Madhavi, K.
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Osmania Univ, Dept Phys, Mat Res Lab, Hyderabad 500007, Andhra Pradesh, IndiaOsmania Univ, Dept Phys, Mat Res Lab, Hyderabad 500007, Andhra Pradesh, India
Madhavi, K.
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Kumar, G. S.
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Osmania Univ, Dept Phys, Mat Res Lab, Hyderabad 500007, Andhra Pradesh, IndiaOsmania Univ, Dept Phys, Mat Res Lab, Hyderabad 500007, Andhra Pradesh, India
Kumar, G. S.
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Prasad, G.
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Osmania Univ, Dept Phys, Mat Res Lab, Hyderabad 500007, Andhra Pradesh, IndiaOsmania Univ, Dept Phys, Mat Res Lab, Hyderabad 500007, Andhra Pradesh, India
Prasad, G.
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机构:
[1] Osmania Univ, Dept Phys, Mat Res Lab, Hyderabad 500007, Andhra Pradesh, India
Tantalum modified strontium bismuth titanate ceramic discs with general formula SrBi4Ti(4-5x)Ta4xO15 with x = 0, 0.1, 0.2 and 0.3 have been prepared through solid state reaction method. The samples are poled and dielectric constant, loss and AC conductivity measurements are done in the temperature region (30-600 degrees C). Ta5+ doping brought out interesting changes in dielectric phase transition behavior of the samples. Dielectric loss and conductivity measurements indicate the presence of charged defects. The results indicate changes in the distortion of the lattice. The distortion is calculated from the changes in the Curie temperature. AC conductivity results are understood in terms of the unoccupied sites and oxygen vacancies that are present in the samples.