Growth of suspended carbon nanotube networks on 100-nm-scale silicon pillars

被引:123
作者
Homma, Y [1 ]
Kobayashi, Y
Ogino, T
Yamashita, T
机构
[1] NTT Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
[2] Tokai Univ, Dept Mat Sci & Technol, Shizuoka 4100395, Japan
关键词
D O I
10.1063/1.1507840
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigated carbon nanotube growth by means of methane chemical vapor deposition on ultrafine silicon patterns prepared by synchrotron-radiation lithography. Grown nanotubes formed suspended bridges between pillars when pillar spacing was comparable to pillar height. Network-like interconnections were obtained on pillar arrays. Nearest-neighbor bridging accounted for more than 80% of all the bridging nanotubes. The self-directed growth between neighboring pillars may be explained by the swing of the nanotube cantilever which contacts a catalyst particle in liquid phase as the nanotube grows. These results confirm the possibility of self-assembled wiring of nanostructures. (C) 2002 American Institute of Physics.
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页码:2261 / 2263
页数:3
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